FJG RAM, short for Floating Junction Gate Random Access Memory, is a type of computer memory invented and subsequently patented in July 2009 by Oriental Semiconductor Electronics, Ltd.[1][2]
According to Oriental Semiconductor researchers, FJG ram has an ultra-compact cell area of 4-5F2 (F refers to feature size) and a capacitor-less cell configuration. The FJG RAM can be produced in existing standard dynamic RAM fabrication plants. Due to the absence of a capacitor, the FJG cell process is more compatible with logic processes, allowing its use in standalone DRAM applications as well as embedded-DRAM applications. Other properties include non-destructive-read and the possibility for DRAM designers to use shared sense amplifiers to reduce the complexity of peripheral circuits.[2]
As of July 2023, there is little evidence of ongoing development or near-term commercialization efforts.
