Titanium trisulfide (TiS3) is an inorganic chemical compound of titanium and sulfur. Its formula unit contains one Ti4+ cation, one S2− anion and one S22−.
 | |
 | |
| Names | |
|---|---|
| Other names Titanium(IV) sulfide | |
| Identifiers | |
3D model (JSmol) |
|
| ChemSpider | |
| |
| |
| Properties | |
| TiS3 | |
| Molar mass | 144.062 g/mol |
| Appearance | Black whiskers |
| Band gap | 1 eV (indirect)[1][2] |
| Electron mobility | 80 cm2/(V·s)[3] |
| Structure[1][2] | |
| Monoclinic, mP8 | |
| P21/m, No. 11 | |
a = 0.4973 nm, b = 0.3443 nm, c = 0.8714 nm α = 90°, β = 97.74°, γ = 90° | |
Formula units (Z) | 2 |
Except where otherwise noted, data are given for materials in their standard state (at 25 °C [77 °F], 100 kPa). | |
TiS3 has a layered crystal structure, where the layers are weakly bonded to each other and can be exfoliated with an adhesive tape. The exfoliated layers have potential applications in ultrathin field-effect transistors.[2]
Synthesis
Millimeter-long crystalline whiskers of TiS3 can be grown by chemical vapor transport at ca. 500 °C, using excess sulfur as the transporting gas.[1][2]
Properties
TiS3 is an n-type semiconductor with an indirect bandgap of about 1 eV.[2] Its individual layers are made of TiS atomic chains; hence they are anisotropic and their properties depend on the in-plane orientation. For example, in the same sample, electron mobility can be 80 cm2/(V·s) along the b-axis and 40 cm2/(V·s) along the a-axis.[3]